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Freescale Semiconductor Technical Data
Document Number: MRF6S21140H Rev. 4, 5/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 30 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 15.5 dB Drain Efficiency -- 27.5% IM3 @ 10 MHz Offset -- - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 41 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 140 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Optimized for Doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S21140HR3 MRF6S21140HSR3
2110 - 2170 MHz, 30 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465B - 03, STYLE 1 NI - 880 MRF6S21140HR3
CASE 465C - 02, STYLE 1 NI - 880S MRF6S21140HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
Symbol VDSS VGS Tstg TC TJ
Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 225
Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 140 W CW Case Temperature 75C, 30 W CW Symbol RJC Value (2,3) 0.35 0.38 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2004-2007. All rights reserved.
MRF6S21140HR3 MRF6S21140HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 2 -- pF VGS(th) VGS(Q) VDS(on) 1 2 -- 2 2.8 0.21 3 4 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 30 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps D IM3 ACPR IRL 14.5 26 -- -- -- 15.5 27.5 - 37 - 41 - 15 17.5 -- - 35 - 38 -9 dB % dBc dBc dB
MRF6S21140HR3 MRF6S21140HSR3 2 RF Device Data Freescale Semiconductor
R1 VBIAS C5 R2 C4 C3
Z6 VSUPPLY C10 C12 C13 + C16
Z5
R3 RF INPUT C17 C9 Z1 C1 C19 C2 Z2 Z3 Z4 DUT C18 C6 C7 Z8 Z9 Z10 Z11 Z12 Z13 RF OUTPUT
C8
Z7
C11
C14
C15
Z1 Z2 Z3 Z4 Z5 Z6, Z7
0.250 x 0.083 Microstrip 1.177 x 0.083 Microstrip 0.443 x 0.083 Microstrip 0.276 x 0.787 Microstrip 0.786 x 0.083 Microstrip (quarter wave length for bias purpose) 0.833 x 0.083 Microstrip (quarter wave length for supply purpose)
Z8 Z9 Z10 Z11, Z12 Z13 PCB
0.531 x 1.000 Microstrip 0.308 x 0.083 Microstrip 0.987 x 0.083 Microstrip 0.070 x 0.220 Microstrip 0.160 x 0.083 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55
Figure 1. MRF6S21140HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S21140HR3(HSR3) Test Circuit Component Designations and Values
Part C1, C3, C8, C9, C10, C11 C2 C4 C5, C12, C13, C14, C15 C6, C19 C7 C16 C17, C18 R1, R2 R3 Description 6.8 pF Chip Capacitors 0.8 pF Chip Capacitor 220 nF Chip Capacitor 10 F Chip Capacitors 0.2 pF Chip Capacitors 0.5 pF Chip Capacitor 220 F, 63 V Electrolytic Capacitor, Radial 0.1 pF Chip Capacitors 10 kW, 1/4 W Chip Resistors 10 W, 1/4 W Chip Resistor Part Number ATC100B6R8CT500XT ATC100B0R8BT500XT VJ1812Y22YKXCAT C5750X5R1H106MT ATC100B0R2BT500XT ATC100B0R5BT500XT EMVY630ATR221MKE0S ATC100B0R1BT500XT CRCW12061002FKTA CRCW120610R0FKTA Manufacturer ATC ATC Vishay TDK ATC ATC Nippon Chemi - Con ATC Vishay Vishay
MRF6S21140HR3 MRF6S21140HSR3 RF Device Data Freescale Semiconductor 3
R2 R1 VGS C10 C4 C3 VDD C16 C5
C12 C13 C17
C1
R3 CUT OUT AREA
C9
C19
C2
C6 C7 C18 C14 C15
C8
C11
MRF6S21140H Rev 0
Figure 2. MRF6S21140HR3(HSR3) Test Circuit Component Layout
MRF6S21140HR3 MRF6S21140HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
15.6 15.5 Gps, POWER GAIN (dB) VDD = 28 Vdc, Pout = 30 W (Avg.), 15.4 IDQ = 1200 mA, 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, 15.3 PAR = 8.5 dB @ 0.01% Probability (CCDF) 15.2 15.1 15 2060 D 30 28 26 Gps IRL IM3 ACPR IM3 (dBc), ACPR (dBc) -32 -36 -40 -12 -15 -18 -21 D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -12 -15 -18 -21 1800 mA IRL, INPUT RETURN LOSS (dB) 1500 mA 900 mA -55 -60 400 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP 1200 mA
2080
2100
2120
2140
2160
2180
2200
-44 2220
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 30 Watts Avg.
15 14.9 Gps, POWER GAIN (dB) 14.8 14.7 14.6 14.5 ACPR 14.4 2060 2080 2100 2120 2140 2160 2180 2200
VDD = 28 Vdc, Pout = 60 W (Avg.), IDQ = 1200 mA, 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
42 40 38 -24 -27 -30 -33 2220
D Gps IRL
IM3
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 60 Watts Avg.
17 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1800 mA 16 Gps, POWER GAIN (dB) 1500 mA 1200 mA 15 900 mA
-20 -25 -30 -35 -40 -45 -50
VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two -Tone Measurements, 10 MHz Tone Spacing IDQ = 600 mA
14
600 mA VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two -Tone Measurements, 10 MHz Tone Spacing 1 10 100
13 12
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6S21140HR3 MRF6S21140HSR3 RF Device Data Freescale Semiconductor 5
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) -10 VDD = 28 Vdc, Pout = 140 W (PEP), IDQ = 1200 mA Two -Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz 3rd Order 58 57 Pout, OUTPUT POWER (dBm) 56 55 54 53 52 51 50 49 -60 0.1 48 1 10 100 32 34 36 38 40 42 44 TWO -TONE SPACING (MHz) Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 2140 MHz P1dB = 52 dBm (158.5 W) Actual P3dB = 52.6 dBm (180 W) Ideal
-20
-30
-40
5th Order
-50
7th Order
Figure 7. Intermodulation Distortion Products versus Tone Spacing
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 35 30 25 20 15 85_C 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 25_C 85_C 25_C -30_C -50 ACPR -55 -60 -25 18
Figure 8. Pulsed CW Output Power versus Input Power
60 -30_C 25_C TC = -30_C 25_C 85_C D 20 10 0 1000 85_C D, DRAIN EFFICIENCY (%) 50 40 Gps 30
-40 -45
TC = - 30_C
Gps
Gps, POWER GAIN (dB)
IM3 (dBc), ACPR (dBc)
VDD = 28 Vdc, IDQ = 1200 mA 25_C f1 = 2135 MHz, f2 = 2145 MHz 2-Carrier W-CDMA, 10 MHz Carrier 85_C Spacing. 3.84 MHz Channel Bandwidth. PAR = 8.5 dB D @ 0.01% Probability (CCDF)
-30_C
85_C -30 25_C IM3 -30_C -35
VDD = 28 Vdc IDQ = 1200 mA 17 f = 2140 MHz 16 15 14 13 12 1
10
100
Pout, OUTPUT POWER (WATTS) CW
Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
16 15 Gps, POWER GAIN (dB) 14 13 12 11 10 9 0 50 100 150 VDD = 24 V 28 V
Figure 10. Power Gain and Drain Efficiency versus CW Output Power
32 V
IDQ = 1200 mA f = 2140 MHz 200 250
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
MRF6S21140HR3 MRF6S21140HSR3 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
108
MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 30 W Avg., and D = 27.5%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu- lators by product.
Figure 12. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK -TO-AVERAGE (dB) W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF +20 +30 0 -10 -20 -30 -40 -50 -60 -70 -80 -25 -ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW -IM3 in 3.84 MHz BW 3.84 MHz Channel BW
+IM3 in 3.84 MHz BW
-20
-15
-10
-5
0
5
10
15
20
25
f, FREQUENCY (MHz)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal
Figure 14. 2-Carrier W-CDMA Spectrum
MRF6S21140HR3 MRF6S21140HSR3 RF Device Data Freescale Semiconductor 7
f = 2200 MHz Zload* f = 2080 MHz Zo = 25
f = 2200 MHz Zsource
f = 2080 MHz
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 30 W Avg. f MHz 2080 2110 2140 2170 2200 Zsource 7.53 - j10.99 7.57 - j10.67 7.58 - j10.23 7.51 - j9.73 7.44 - j9.32 Zload 1.40 - j3.03 1.37 - j2.78 1.34 - j2.52 1.32 - j2.28 1.31 - j2.06
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance MRF6S21140HR3 MRF6S21140HSR3 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M
(FLANGE) 3
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B M
M (INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
bbb ccc H
M
TA TA
M
B B
M
TA
M
B S
N
M M M
(LID)
aaa C
M
TA
M
B
DIM A B C D E F G H K M N Q R S aaa bbb ccc
F E A
(FLANGE)
T A
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465B - 03 ISSUE D NI - 880 MRF6S21140HR3
B
1
(FLANGE)
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B M
M
(INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
bbb ccc H
M
TA TA
M
B B
M
TA TA
M
B S B
N
M M M
(LID)
aaa
M
M
DIM A B C D E F H K M N R S aaa bbb ccc
C F E A
(FLANGE)
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
T A
SEATING PLANE
CASE 465C - 02 ISSUE D NI - 880S MRF6S21140HSR3
MRF6S21140HR3 MRF6S21140HSR3 RF Device Data Freescale Semiconductor 9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 4 Date May 2007 Description * Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 * Removed "Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications" bullet as functionality is standard, p. 1 * Added "Optimized for Doherty Applications" bullet to Features section, p. 1 * Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 * Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table and related "Continuous use at maximum temperature will affect MTTF" footnote added, p. 1 * Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added "Measured in Functional Test", On Characteristics table, p. 2 * Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 * Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 * Adjusted scale for Fig. 5, Two - Tone Power Gain versus Output Power, to better match the device's capabilities, p. 5 * Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 * Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 * Added Product Documentation and Revision History, p. 10
MRF6S21140HR3 MRF6S21140HSR3 10 RF Device Data Freescale Semiconductor
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MRF6S21140HR3 MRF6S21140HSR3
Document Number: RF Device Data MRF6S21140H Rev. 4, 5/2007 Freescale Semiconductor
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